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IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Tensile Strength N/m²: 80N/mm²

Name: IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Tensile Strength N/m²: 80N/mm²
Brand: www.envasessoplados.com
SKU: 85747215134
Price: 10.00 USD
Availability: InStock
Rating: 4.5175 (8 reviews)

SKU: 85747215134

4.5

EUR10.00 EUR36.00

IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Tensile Strength N/m²: 80N/mm²

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Description

Tensile Strength N/m²: 80N/mm²

MURATA - GRM31CZ71C226ME15L - SMD Multilayer Ceramic Capacitor

Gyroscope Range: ± 125°/s

MULTICOMP PRO - MAX540H245STR

IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Tensile Strength N/m²: 80N/mm²Channel Type: N Channel Continuous Drain Current Id: 26A Drain Source On State Resistance: 0. 09ohm Drain Source Voltage Vds: 1. 2kV Gate Source Threshold Voltage Max: 4. 5V MOSFET Module Configuration: Single MSL: MSL 1 Unlimited No. of Pins: 7Pins On Resistance Rds(on): 0. 09ohm Operating Temperature Max: 175C Power Dissipation: 136W Power Dissipation Pd: 136W Product Range: CoolSiC Rds(on) Test Voltage: 18V Transistor Case Style: TO 263 (D2PAK)

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